Myths about Gallium Nitride SemiconductorsGallium nitride (GaN) has emerged as the technology to offer greater efficiency, significantly reduce system size and weight, and enable…Jun 22, 2023Jun 22, 2023
The EPC9165 is a 2 kW, two-phase 48 V — 14 V bidirectional converter that operates with 97 % peak…The solution is scalable; two converters can be paralleled for 4 kW, three converters for 6 kW or only one phase can be used for 1 kW. In…Feb 17, 2022Feb 17, 2022
eToF™ Laser Driver ICs for Advanced Autonomy LidarLaser drivers for light distancing and ranging (lidar) are used in a pulsed-power mode. What are the basic requirements for these laser…Mar 22, 2021Mar 22, 2021
Why GaN for DC-DC Space DesignsPower electronics engineers are constantly working towards designs with higher efficiency and higher power density while maintaining high…Mar 3, 2021Mar 3, 2021
How GaN is Revolutionizing Motor Drive ApplicationsMotor drive applications span several markets: industrial, appliance, and automotive. A commonality that occurs regardless of market is…Feb 9, 2021Feb 9, 2021
Reduce Audible Noise in Motor Drive Designs Using eGaN® FETs and ICsBrushless DC (BLDC) motors are popular and finding increasing application in robotics, e-mobility, and drones. Such applications have…Jan 15, 2021Jan 15, 2021
How to Design a Bi-Directional 1/16th Brick 48 V-12 V Converter Using Monolithic GaN ePower™ StageIntroductionDec 15, 2020Dec 15, 2020
How to Design a Highly Efficient, 2.5Acknowledgement — This application note and associated hardware was developed in collaboration with Semiconductor Power Electronics Center…Nov 3, 2020Nov 3, 2020
New 100 V eGaN® Devices Increase Benchmark Performance Over the Aging Silicon Power MOSFETEfficient Power Conversion (EPC) is increasing the performance distance between the aging silicon power MOSFET and eGaN transistors with…Sep 22, 2020Sep 22, 2020
New 200 V eGaN® Devices Double the Performance Edge Over the Aging Silicon Power MOSFET.Efficient Power Conversion (EPC) is doubling the performance distance between the aging silicon power MOSFET and eGaN ®transistors with…Aug 21, 2020Aug 21, 2020